STP13NK50Z

Specifications

Transistor Element Material

SILICON

Fall Time Typ

24 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±30V

Power Dissipation Max

140W Tc

Current Continuous Drain Id25

11A Tc

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Input Capacitance Ciss Max Vds

1600pF @ 25V

Threshold Voltage

3.75V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

TO-220-3

Seri

SuperMESH™

Gate To Source Voltage Vgs

30V

Montaj

Through Hole

Nominal Vgs

3.75 V

Parça Durumu

Obsolete

Dual Supply Voltage

500V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

240 mJ

Vgsth Max Id

4.5V @ 100μA

Gate Charge Qg Max Vgs

47nC @ 10V

Power Dissipation

140W

Montaj Tipi

Through Hole

Element Configuration

Single

Ambalaj

Tube

Turn Off Delay Time

61 ns

Transistor Application

SWITCHING

Rise Time

23ns

Drain To Source Breakdown Voltage

500V

Rds On Max Id Vgs

480m Ω @ 6.5A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal

Through Hole

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Temel Parça No

STP13N

Continuous Drain Current Id

11A