Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tube
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Rise Time
- 16ns
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 850m Ω @ 5A, 10V
- ECCN Kodu
- EAR99
- Uzunluk
- 10.4mm
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 40A
- Transistor Element Material
- SILICON
- Jedec95 Code
- TO-220AB
- Vgs Max
- ±30V
- Power Dissipation Max
- 190W Tc
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Threshold Voltage
- 4V
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30V
- Parça Durumu
- Active
- Vgsth Max Id
- 5V @ 100μA
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Yükseklik
- 15.75mm
- Power Dissipation
- 190W
- Additional Feature
- ULTRA-LOW RESISTANCE
- Turn Off Delay Time
- 50 ns
- Drain To Source Breakdown Voltage
- 950V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Continuous Drain Current Id
- 10A
- Temel Parça No
- STP13N
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Fall Time Typ
- 21 ns
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 10A Tc
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 1620pF @ 100V
- Seri
- SuperMESH3™
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