Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 12A Tc
- Power Dissipation Max
- 190W Tc
- Vgs Max
- ±30V
- Fet Type
- N-Channel
- Jedec95 Code
- TO-220AB
- Transistor Element Material
- SILICON
- Fall Time Typ
- 16 ns
- Kılıf / Paket
- TO-220-3
- Radyasyon Dayanımı
- No
- Seri
- SuperMESH5™
- Input Capacitance Ciss Max Vds
- 870pF @ 100V
- Fabrika Tedarik Süresi
- 17 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Genişlik
- 4.6mm
- Montaj
- Through Hole
- Gate To Source Voltage Vgs
- 30V
- Power Dissipation
- 190W
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 16 ns
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 15.75mm
- Vgsth Max Id
- 5V @ 100μA
- Gate Charge Qg Max Vgs
- 29nC @ 10V
- Transistor Application
- SWITCHING
- Rise Time
- 16ns
- Element Configuration
- Single
- Ambalaj
- Tube
- Turn Off Delay Time
- 42 ns
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Breakdown Voltage
- 800V
- Rds On Max Id Vgs
- 450m Ω @ 6A, 10V
- Number Of Elements
- 1
- Drainsource On Resistancemax
- 0.45Ohm
- ECCN Kodu
- EAR99
- Temel Parça No
- STP13N
- Continuous Drain Current Id
- 12A
- Pin Sayısı
- 3
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