STP130N10F3

Specifications

Input Capacitance Ciss Max Vds

3305pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Seri

STripFET™ III

Transistor Element Material

SILICON

Fall Time Typ

7.2 ns

Current Continuous Drain Id25

120A Tc

Power Dissipation Max

250W Tc

Vgs Max

±20V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Direnç

9.6MOhm

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

Not Applicable

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

57nC @ 10V

Additional Feature

ULTRA LOW RESISTANCE

Power Dissipation

250W

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

17 ns

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

9.6m Ω @ 60A, 10V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Ambalaj

Tube

Turn Off Delay Time

52 ns

Transistor Application

SWITCHING

Rise Time

38ns

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

450A

Temel Parça No

STP130

Continuous Drain Current Id

120A