Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Jedec95 Code
- TO-220AB
- Power Dissipation Max
- 190W Tc
- Vgs Max
- ±30V
- Akım Değeri
- 10.5A
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Reach Svhc
- No SVHC
- Threshold Voltage
- 3.75V
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 30V
- Power Dissipation
- 190W
- Voltage Rated Dc
- 800V
- Vgsth Max Id
- 4.5V @ 100μA
- Yükseklik
- 9.15mm
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Rise Time
- 18ns
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Kurşunsuz
- Lead Free
- Element Configuration
- Single
- Rds On Max Id Vgs
- 750m Ω @ 5.25A, 10V
- Terminal Kaplaması
- Tin (Sn)
- ECCN Kodu
- EAR99
- Pulsed Drain Currentmax Idm
- 42A
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.4mm
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 10.5A Tc
- Fall Time Typ
- 20 ns
- JESD-609 Kodu
- e3
- Seri
- SuperMESH™
- Kılıf / Paket
- TO-220-3
- Input Capacitance Ciss Max Vds
- 2620pF @ 25V
- Genişlik
- 4.6mm
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 30 ns
- Gate Charge Qg Max Vgs
- 87nC @ 10V
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