Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Fall Time Typ
- 15 ns
- Current Continuous Drain Id25
- 11A Tc
- Fet Type
- N-Channel
- Input Capacitance Ciss Max Vds
- 1630pF @ 25V
- Fabrika Tedarik Süresi
- 16 Weeks
- Kılıf / Paket
- TO-220-3
- Seri
- MDmesh™
- Montaj
- Through Hole
- Genişlik
- 4.6mm
- Direnç
- 400mOhm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Avalanche Energy Rating Eas
- 400 mJ
- Gate Charge Qg Max Vgs
- 43.6nC @ 10V
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 22 ns
- Turn Off Delay Time
- 46 ns
- Drain To Source Breakdown Voltage
- 800V
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Continuous Drain Current Id
- 11A
- Temel Parça No
- STP11N
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Akım Değeri
- 11A
- Power Dissipation Max
- 150W Tc
- Vgs Max
- ±30V
- Jedec95 Code
- TO-220AB
- Threshold Voltage
- 4V
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30V
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Yükseklik
- 9.15mm
- Vgsth Max Id
- 5V @ 250μA
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