Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 600V
- Power Dissipation
- 90W
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Parça Durumu
- Obsolete
- Gate To Source Voltage Vgs
- 25V
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 3V
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- 150°C TJ
- Power Dissipation Max
- 90W Tc
- Vgs Max
- ±25V
- Jedec95 Code
- TO-220AB
- Transistor Element Material
- SILICON
- Akım Değeri
- 10A
- Pulsed Drain Currentmax Idm
- 40A
- Operating Mode
- ENHANCEMENT MODE
- Terminal Kaplaması
- Tin (Sn)
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 450m Ω @ 5A, 10V
- Transistor Application
- SWITCHING
- Rise Time
- 18.5ns
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 22 ns
- Direnç
- 450MOhm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Avalanche Energy Rating Eas
- 200 mJ
- Gate Charge Qg Max Vgs
- 31nC @ 10V
- Montaj
- Through Hole
- Kılıf / Paket
- TO-220-3
- Seri
- MDmesh™ II
- Input Capacitance Ciss Max Vds
- 850pF @ 50V
- Current Continuous Drain Id25
- 10A Tc
- Fet Type
- N-Channel
- JESD-609 Kodu
- e3
- Fall Time Typ
- 12 ns
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