Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 30V
- Parça Durumu
- Obsolete
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Yükseklik
- 16.4mm
- Vgsth Max Id
- 5V @ 250μA
- Voltage Rated Dc
- 650V
- Power Dissipation
- 35W
- Transistor Element Material
- SILICON
- Akım Değeri
- 11A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vgs Max
- ±30V
- Power Dissipation Max
- 35W Tc
- Jedec95 Code
- TO-220AB
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- ECCN Kodu
- EAR99
- Uzunluk
- 10.4mm
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 44A
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Rise Time
- 20ns
- Rds On Max Id Vgs
- 450m Ω @ 5.5A, 10V
- Montaj
- Through Hole
- Genişlik
- 4.6mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 20 ns
- JESD-609 Kodu
- e3
- Fall Time Typ
- 11 ns
- Current Continuous Drain Id25
- 11A Tc
- Fet Type
- N-Channel
- Input Capacitance Ciss Max Vds
- 1000pF @ 25V
- Kılıf / Paket
- TO-220-3 Full Pack
- Seri
- MDmesh™
- Continuous Drain Current Id
- 11A
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