STP11NM60

Specifications

Montaj

Through Hole

Genişlik

12.7mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

NRND (Last Updated: 8 months ago)

Direnç

450mOhm

Gate Charge Qg Max Vgs

30nC @ 10V

Turn On Delay Time

20 ns

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Fall Time Typ

11 ns

Current Continuous Drain Id25

11A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1000pF @ 25V

Kılıf / Paket

TO-220-3

Seri

MDmesh™

Temel Parça No

STP11N

Continuous Drain Current Id

11A

Number Of Elements

1

Pin Sayısı

3

Turn Off Delay Time

6 ns

Drain To Source Breakdown Voltage

600V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Parça Durumu

Not For New Designs

Yükseklik

6.35mm

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

5V @ 250μA

Voltage Rated Dc

600V

Drain To Source Voltage Vdss

650V

Power Dissipation

160W

Transistor Element Material

SILICON

Akım Değeri

11A

Power Dissipation Max

160W Tc

Vgs Max

±25V

Jedec95 Code

TO-220AB

Threshold Voltage

4V

Çalışma Sıcaklığı

-65°C~150°C TJ

Reach Svhc

No SVHC