STP110N8F6

Specifications

Seri

STripFET™ F6

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

20 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

9130pF @ 40V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

110A Tc

Power Dissipation Max

200W Tc

Vgs Max

±20V

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Voltage Vdss

80V

Vgsth Max Id

4.5V @ 250μA

Gate Charge Qg Max Vgs

150nC @ 10V

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Avalanche Energy Rating Eas

180 mJ

Parça Durumu

Active

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Rds On Max Id Vgs

6.5m Ω @ 55A, 10V

Ds Breakdown Voltagemin

80V

Transistor Application

SWITCHING

Ambalaj

Tube

Pulsed Drain Currentmax Idm

440A

Jesd30 Code

R-PSFM-T3

Case Connection

DRAIN

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0065Ohm

ECCN Kodu

EAR99

Number Of Elements

1

Temel Parça No

STP110

Continuous Drain Current Id

110A