STP10P6F6

Specifications

Fabrika Tedarik Süresi

20 Weeks

Çalışma Sıcaklığı

175°C TJ

Input Capacitance Ciss Max Vds

340pF @ 48V

Seri

DeepGATE™, STripFET™ VI

Kılıf / Paket

TO-220-3

Fall Time Typ

10 ns

Transistor Element Material

SILICON

Fet Type

P-Channel

Jedec95 Code

TO-220AB

Vgs Max

±20V

Power Dissipation Max

30W Tc

Current Continuous Drain Id25

10A Tc

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

6.4nC @ 10V

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

80 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

35W

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Parça Durumu

Active

Drain To Source Breakdown Voltage

60V

Rds On Max Id Vgs

160m Ω @ 5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Ambalaj

Tube

Turn Off Delay Time

16.5 ns

Element Configuration

Single

Rise Time

7ns

Transistor Application

SWITCHING

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

40A

Jesd30 Code

R-PSFM-T3

Temel Parça No

STP10

Continuous Drain Current Id

10A

ECCN Kodu

EAR99

Number Of Elements

1