STP100N6F7

Specifications

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

SINGLE

Case Connection

DRAIN

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

400A

Temel Parça No

STP100

Continuous Drain Current Id

100A

Number Of Elements

1

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0056Ohm

Rds On Max Id Vgs

5.6m Ω @ 50A, 10V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Ambalaj

Tube

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

60V

Avalanche Energy Rating Eas

200 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

30nC @ 10V

Vgsth Max Id

4V @ 250μA

Drain To Source Voltage Vdss

60V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Montaj

Through Hole

Parça Durumu

Active

Input Capacitance Ciss Max Vds

1980pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Fabrika Tedarik Süresi

22 Weeks

Kılıf / Paket

TO-220-3

Seri

STripFET™ F7

Transistor Element Material

SILICON

Vgs Max

±20V

Power Dissipation Max

125W Tc

Current Continuous Drain Id25

100A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel