STN1NK80Z

Specifications

Akım Değeri

250mA

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

6.5mm

Pulsed Drain Currentmax Idm

5A

Turn Off Delay Time

22 ns

Gate Charge Qg Max Vgs

7.7nC @ 10V

Voltage Rated Dc

800V

Drain Currentmax Abs Id

0.25A

Input Capacitance Ciss Max Vds

160pF @ 25V

Drain To Source Breakdown Voltage

800V

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

3.75V

Terminal Kaplaması

Matte Tin (Sn) - annealed

Direnç

16Ohm

Fall Time Typ

55 ns

Temel Parça No

STN1N

Tepe Reflow Sıcaklığı (°C)

260

Genişlik

3.5mm

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4.5V @ 50μA

Max Junction Temperature Tj

150°C

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Fet Type

N-Channel

Avalanche Energy Rating Eas

50 mJ

JESD-609 Kodu

e3

Number Of Channels

1

Tepe Reflow Süresi (maks. sn)

30

ECCN Kodu

EAR99

Turn On Delay Time

8 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Reach Svhc

No SVHC

Number Of Elements

1

Fabrika Tedarik Süresi

8 Weeks

Power Dissipation Max

2.5W Tc

Current Continuous Drain Id25

250mA Tc

Case Connection

DRAIN

Continuous Drain Current Id

250mA