STN1NF20

Specifications

Gate Charge Qg Max Vgs

5.7nC @ 10V

Pulsed Drain Currentmax Idm

4A

Avalanche Energy Rating Eas

70 mJ

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

90pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Drain Currentmax Abs Id

1A

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Drain To Source Breakdown Voltage

200V

Power Dissipation Max

2W Ta

Current Continuous Drain Id25

1A Tc

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

1.5 Ω @ 500mA, 10V

Element Configuration

Single

Pin Sayısı

4

Case Connection

DRAIN

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

1A

Montaj

Surface Mount

Fall Time Typ

12.4 ns

Power Dissipation

2W

Kılıf / Paket

TO-261-4, TO-261AA

Vgs Max

±20V

Temel Parça No

STN1N

Montaj Tipi

Surface Mount

Ambalaj

Cut Tape (CT)

Terminal Sayısı

4

Terminal Formu

GULL WING

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fet Type

N-Channel

Kurşunsuz

Lead Free