STN1HNK60

Specifications

Fet Type

N-Channel

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Max Junction Temperature Tj

150°C

Vgsth Max Id

3.7V @ 250μA

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Genişlik

3.5mm

Tepe Reflow Sıcaklığı (°C)

260

Temel Parça No

STN1H

Fall Time Typ

25 ns

Direnç

8.5Ohm

Jesd30 Code

R-PDSO-G4

Terminal Kaplaması

Matte Tin (Sn) - annealed

Threshold Voltage

3V

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

600V

Input Capacitance Ciss Max Vds

156pF @ 25V

Voltage Rated Dc

600V

Drain Currentmax Abs Id

0.4A

Gate Charge Qg Max Vgs

10nC @ 10V

Nominal Vgs

3 V

Turn Off Delay Time

19 ns

Uzunluk

6.5mm

Akım Değeri

400mA

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Rise Time

5ns

Seri

SuperMESH™

Parça Durumu

Active

Pin Sayısı

4

Terminal Sayısı

4

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Kılıf / Paket

TO-261-4, TO-261AA

Power Dissipation

3.3W

Vgs Max

±30V

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Rds On Max Id Vgs

8.5 Ω @ 500mA, 10V