STLD125N4F6AG

Specifications

Seri

STripFET™ F6

Reference Standard

AEC-Q101

Drive Voltage Max Rds On Min Rds On

6.5V 10V

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Vgsth Max Id

4V @ 1mA

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Temel Parça No

STLD125

Drainsource On Resistancemax

0.004Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Terminal Sayısı

5

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

FLAT

Number Of Elements

1

Gate Charge Qg Max Vgs

91nC @ 10V

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Drain Currentmax Abs Id

101A

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

480A

Current Continuous Drain Id25

120A Tc

Drain To Source Voltage Vdss

40V

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fabrika Tedarik Süresi

20 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Jesd30 Code

R-PDSO-F5

Kılıf / Paket

8-PowerWDFN

Ds Breakdown Voltagemin

40V

Input Capacitance Ciss Max Vds

5600pF @ 10V

Power Dissipation Max

130W Tc

Avalanche Energy Rating Eas

150 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

3m Ω @ 75A, 10V