STL210N4F7AG

Specifications

Yüzey Montaj

YES

Drainsource On Resistancemax

0.0016Ohm

Fet Type

N-Channel

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fabrika Tedarik Süresi

24 Weeks

Gate Charge Qg Max Vgs

43nC @ 10V

Terminal Formu

FLAT

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Drain Currentmax Abs Id

120A

Kılıf / Paket

8-PowerVDFN

Drain To Source Voltage Vdss

40V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

480A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

5

Temel Parça No

STL210

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Ds Breakdown Voltagemin

40V

Input Capacitance Ciss Max Vds

3600pF @ 25V

Current Continuous Drain Id25

120A Tc

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F5

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

4V @ 250μA

Transistor Application

SWITCHING

Rds On Max Id Vgs

1.6m Ω @ 16A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

Automotive, AEC-Q101, STripFET™ F7

Vgs Max

±20V

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

300 mJ

Power Dissipation Max

150W Tc

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)