STL18N55M5

Specifications

Vgsth Max Id

5V @ 250μA

Terminal Kaplaması

Matte Tin (Sn) - annealed

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

23 ns

Input Capacitance Ciss Max Vds

1352pF @ 100V

Current Continuous Drain Id25

2.4A Ta 13A Tc

Transistor Element Material

SILICON

Pin Sayısı

4

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

3 (168 Hours)

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

3W Ta 90W Tc

Vgs Max

±25V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

200 mJ

Rds On Max Id Vgs

270m Ω @ 6A, 10V

Çalışma Sıcaklığı

150°C TJ

Seri

MDmesh™ V

Transistor Application

SWITCHING

Kılıf / Paket

8-PowerVDFN

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

13A

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Radyasyon Dayanımı

No

Case Connection

DRAIN

Gate Charge Qg Max Vgs

31nC @ 10V

Power Dissipation

3W

Rise Time

9.5ns

Direnç

270MOhm

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

550V

Fall Time Typ

13 ns

Number Of Elements

1

Montaj

Surface Mount