STL160N3LLH6

Specifications

Vgsth Max Id

1V @ 250μA

Reach Svhc

No SVHC

Uzunluk

4.75mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

160A Tc

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

136W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

1.3m Ω @ 17.5A, 10V

Transistor Application

SWITCHING

Vgs Max

±20V

Turn On Delay Time

18.5 ns

Fabrika Tedarik Süresi

20 Weeks

Gate Charge Qg Max Vgs

61.5nC @ 4.5V

Kurşunsuz

Lead Free

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Radyasyon Dayanımı

No

Threshold Voltage

1V

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fet Type

N-Channel

ECCN Kodu

EAR99

Yükseklik

880μm

Montaj

Surface Mount

Terminal Sayısı

5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn Off Delay Time

107.5 ns

Montaj Tipi

Surface Mount

Pin Sayısı

5

Input Capacitance Ciss Max Vds

6375pF @ 25V

Transistor Element Material

SILICON

Seri

DeepGATE™, STripFET™ VI

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

900 mJ

Genişlik

5.75mm

Case Connection

DRAIN

Rise Time

32ns

Power Dissipation

80W

Continuous Drain Current Id

160A