STL12N65M5

Specifications

Number Of Elements

1

Montaj

Surface Mount

Temel Parça No

STL12

Pulsed Drain Currentmax Idm

7.2A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

4

Pin Sayısı

4

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Radyasyon Dayanımı

No

Kılıf / Paket

8-PowerVDFN

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

8.5A

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

17nC @ 10V

Power Dissipation

48W

Rise Time

10ns

Case Connection

DRAIN

Fet Type

N-Channel

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.43Ohm

Fall Time Typ

13.5 ns

Drain To Source Breakdown Voltage

650V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

48W Tc

Ambalaj

Tape & Reel (TR)

Vgs Max

±25V

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Rds On Max Id Vgs

530m Ω @ 4.25A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

MDmesh™ V

Vgsth Max Id

5V @ 250μA

Input Capacitance Ciss Max Vds

644pF @ 100V

Current Continuous Drain Id25

8.5A Tc

Transistor Element Material

SILICON

Pin Sayısı

8

Jesd30 Code

S-PSSO-N4

Montaj Tipi

Surface Mount