STL110N10F7

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

DeepGATE™, STripFET™ VII

Avalanche Energy Rating Eas

490 mJ

Terminal Pozisyonu

DUAL

Genişlik

6.35mm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Turn Off Delay Time

52 ns

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

5117pF @ 50V

Pin Sayısı

8

Jesd30 Code

R-PDSO-F5

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Temel Parça No

STL110

Case Connection

DRAIN

Power Dissipation

5W

Rise Time

36ns

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

8-PowerVDFN

Continuous Drain Current Id

107A

Gate To Source Voltage Vgs

20V

Fall Time Typ

21 ns

Direnç

6mOhm

Ambalaj

Cut Tape (CT)

Power Dissipation Max

136W Tc

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

6m Ω @ 10A, 10V

Transistor Application

SWITCHING

Turn On Delay Time

25 ns

Vgs Max

±20V

Vgsth Max Id

4.5V @ 250μA

Uzunluk

5.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

107A Tc

Montaj

Surface Mount

Yükseklik

950μm

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

5