STI6N80K5

Specifications

Fabrika Tedarik Süresi

17 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Weight

2.084002g

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Ambalaj

Tube

Seri

SuperMESH5™

Drain To Source Breakdown Voltage

800V

Fet Type

N-Channel

Power Dissipation Max

85W Tc

Temel Parça No

STI6N

Current Continuous Drain Id25

4.5A Tc

Gate Charge Qg Max Vgs

7.5nC @ 10V

Power Dissipation

110W

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

1.6 Ω @ 2A, 10V

Number Of Elements

1

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Terminal Sayısı

3

Transistor Element Material

SILICON

Continuous Drain Current Id

4.5A

Montaj

Through Hole

Case Connection

DRAIN

Vgsth Max Id

5V @ 100μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

255pF @ 100V

Avalanche Energy Rating Eas

85 mJ

Element Configuration

Single