STI55NF03L

Specifications

Gate Charge Qg Max Vgs

27nC @ 4.5V

Pin Sayısı

3

Drainsource On Resistancemax

0.02Ohm

Current Continuous Drain Id25

55A Tc

Temel Parça No

STI55N

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Ds Breakdown Voltagemin

30V

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Seri

STripFET™ II

Power Dissipation Max

80W Tc

Fet Type

N-Channel

Drain To Source Voltage Vdss

30V

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-60°C~175°C TJ

Vgsth Max Id

2.5V @ 250μA

Transistor Element Material

SILICON

Terminal Sayısı

3

Case Connection

DRAIN

Jesd30 Code

R-PSIP-T3

Continuous Drain Current Id

55A

Montaj

Through Hole

Input Capacitance Ciss Max Vds

1265pF @ 25V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

120 mJ

Montaj Tipi

Through Hole

Rds On Max Id Vgs

13m Ω @ 27.5A, 10V

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

220A

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Vgs Max

±16V