STI45N10F7

Specifications

Ambalaj

Tube

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Fet Type

N-Channel

Power Dissipation Max

60W Tc

Seri

DeepGATE™, STripFET™ VII

Drain To Source Breakdown Voltage

100V

Operating Mode

ENHANCEMENT MODE

Genişlik

4.6mm

Weight

2.084002g

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

10.4mm

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Temel Parça No

STI45N

Current Continuous Drain Id25

45A Tc

Gate Charge Qg Max Vgs

25nC @ 10V

Fall Time Typ

8 ns

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Number Of Elements

1

Number Of Channels

1

Rise Time

17ns

Rds On Max Id Vgs

18m Ω @ 22.5A, 10V

Montaj Tipi

Through Hole

Turn Off Delay Time

24 ns

Element Configuration

Single

Input Capacitance Ciss Max Vds

1640pF @ 50V

Yükseklik

9.35mm

Turn On Delay Time

15 ns

Continuous Drain Current Id

45A

Montaj

Through Hole

Case Connection

DRAIN

Terminal Sayısı

3

Transistor Element Material

SILICON

Vgsth Max Id

4.5V @ 250μA