STI33N65M2

Specifications

Gate Charge Qg Max Vgs

41.5nC @ 10V

Current Continuous Drain Id25

24A Tc

Temel Parça No

STI33N

Drainsource On Resistancemax

0.14Ohm

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

650V

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

10.4mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Genişlik

4.6mm

Fabrika Tedarik Süresi

16 Weeks

Drain To Source Voltage Vdss

650V

Fet Type

N-Channel

Power Dissipation Max

190W Tc

Seri

MDmesh™ M2

Ambalaj

Tube

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

4V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

24A

Montaj

Through Hole

Case Connection

DRAIN

Terminal Sayısı

3

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

780 mJ

Element Configuration

Single

Input Capacitance Ciss Max Vds

1790pF @ 100V

Yükseklik

9.35mm

Turn On Delay Time

13.5 ns

Montaj Tipi

Through Hole

Turn Off Delay Time

72.5 ns

Number Of Elements

1

Rds On Max Id Vgs

140m Ω @ 12A, 10V

Pin Sayısı

3

Gate To Source Voltage Vgs

25V

Parça Durumu

Active

Pulsed Drain Currentmax Idm

96A