STI32N65M5

Specifications

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

24A

Montaj

Through Hole

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

3

Transistor Element Material

SILICON

Element Configuration

Single

Avalanche Energy Rating Eas

650 mJ

Input Capacitance Ciss Max Vds

3320pF @ 100V

Yükseklik

10.75mm

Turn On Delay Time

53 ns

Montaj Tipi

Through Hole

Turn Off Delay Time

53 ns

Number Of Elements

1

Rise Time

12ns

Rds On Max Id Vgs

119m Ω @ 12A, 10V

Pin Sayısı

3

Gate To Source Voltage Vgs

25V

Pulsed Drain Currentmax Idm

96A

Parça Durumu

Obsolete

Additional Feature

AVALANCHE ENERGY RATED

Vgs Max

±25V

Fall Time Typ

16 ns

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

150W

Gate Charge Qg Max Vgs

72nC @ 10V

Current Continuous Drain Id25

24A Tc

Temel Parça No

STI32N

Drainsource On Resistancemax

0.119Ohm

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Uzunluk

10.4mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Genişlik

4.6mm