STI24N60M2

Specifications

Ambalaj

Tube

Genişlik

4.6mm

Temel Parça No

STI24N

Yükseklik

9.35mm

Gate To Source Voltage Vgs

25V

Pin Sayısı

3

Avalanche Energy Rating Eas

180 mJ

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

15 ns

Drainsource On Resistancemax

0.19Ohm

Fet Type

N-Channel

Vgsth Max Id

4V @ 250μA

Montaj

Through Hole

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

60 ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Current Continuous Drain Id25

18A Tc

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

190m Ω @ 9A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

18A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1060pF @ 100V

Pulsed Drain Currentmax Idm

72A

Uzunluk

10.4mm

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

29nC @ 10V

Seri

MDmesh™ II Plus

Montaj Tipi

Through Hole

Rise Time

9ns

Parça Durumu

Active

Terminal Sayısı

3

Drain To Source Breakdown Voltage

600V

Turn On Delay Time

14 ns

Vgs Max

±25V

Element Configuration

Single