STI20N65M5

Specifications

Transistor Element Material

SILICON

Power Dissipation

130W

Operating Mode

ENHANCEMENT MODE

Montaj

Through Hole

Vgsth Max Id

5V @ 250μA

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

7.5 ns

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Avalanche Energy Rating Eas

270 mJ

Pin Sayısı

3

Gate To Source Voltage Vgs

25V

Temel Parça No

STI20N

Ambalaj

Tube

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation Max

130W Tc

Number Of Elements

1

Element Configuration

Single

Vgs Max

±25V

Drain To Source Breakdown Voltage

650V

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

3

Montaj Tipi

Through Hole

Rise Time

7.5ns

Seri

MDmesh™ V

Gate Charge Qg Max Vgs

36nC @ 10V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1434pF @ 100V

Pulsed Drain Currentmax Idm

72A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

18A

Transistor Application

SWITCHING

Rds On Max Id Vgs

190m Ω @ 9A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Current Continuous Drain Id25

18A Tc

Fabrika Tedarik Süresi

17 Weeks