STH80N10F7-2

Specifications

Ambalaj

Cut Tape (CT)

Genişlik

9.17mm

Temel Parça No

STH80N

Yükseklik

4.8mm

Number Of Channels

1

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Additional Feature

ULTRA LOW-ON RESISTANCE

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0095Ohm

Fall Time Typ

13 ns

Fet Type

N-Channel

Vgsth Max Id

4.5V @ 250μA

Montaj

Surface Mount

Turn Off Delay Time

36 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

110W

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

37 Weeks

Current Continuous Drain Id25

80A Tc

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

9.5m Ω @ 40A, 10V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

80A

Input Capacitance Ciss Max Vds

3100pF @ 50V

Uzunluk

10.4mm

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

45nC @ 10V

Weight

3.949996g

Seri

DeepGATE™, STripFET™ VII

Montaj Tipi

Surface Mount

Rise Time

32ns

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

2