STH240N75F3-2

Specifications

Power Dissipation

300W

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 250μA

Fet Type

N-Channel

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

100 ns

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

3Ohm

Fall Time Typ

15 ns

Ambalaj

Tape & Reel (TR)

Temel Parça No

STH240

Avalanche Energy Rating Eas

600 mJ

Lifecycle Status

NRND (Last Updated: 8 months ago)

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Turn On Delay Time

25 ns

Drain To Source Breakdown Voltage

75V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs Max

±20V

Element Configuration

Single

Number Of Elements

1

Power Dissipation Max

300W Tc

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

87nC @ 10V

Rise Time

70ns

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Sayısı

2

Parça Durumu

Obsolete

Seri

STripFET™ III

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

180A

Rds On Max Id Vgs

3m Ω @ 90A, 10V

Input Capacitance Ciss Max Vds

6800pF @ 25V

Pulsed Drain Currentmax Idm

720A