STH240N10F7-2

Specifications

Power Dissipation

300W

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Vgsth Max Id

4.5V @ 250μA

Fet Type

N-Channel

Threshold Voltage

4.5V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

110 ns

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0025Ohm

Number Of Channels

1

Yükseklik

4.7mm

Ambalaj

Tape & Reel (TR)

Temel Parça No

STH240

Avalanche Energy Rating Eas

500 mJ

Additional Feature

ULTRA LOW RESISTANCE

Gate To Source Voltage Vgs

20V

Turn On Delay Time

49 ns

Max Junction Temperature Tj

175°C

Drain To Source Breakdown Voltage

100V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs Max

±20V

Number Of Elements

1

Power Dissipation Max

300W Tc

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

160nC @ 10V

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

2

Parça Durumu

Active

Kurşunsuz

Lead Free

Seri

STripFET™

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

180A

Rds On Max Id Vgs

2.5m Ω @ 60A, 10V