STH210N75F6-2

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

180A

Transistor Application

SWITCHING

Rds On Max Id Vgs

2.8m Ω @ 90A, 10V

Input Capacitance Ciss Max Vds

11800pF @ 25V

Pulsed Drain Currentmax Idm

720A

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

180A Tc

Turn On Delay Time

34 ns

Drain To Source Breakdown Voltage

75V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs Max

±20V

Reach Svhc

No SVHC

Element Configuration

Single

Number Of Elements

1

Power Dissipation Max

300W Tc

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

171nC @ 10V

Pin Sayısı

3

ECCN Kodu

EAR99

Uzunluk

15.8mm

Terminal Sayısı

2

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

Rise Time

70ns

Montaj Tipi

Surface Mount

Seri

DeepGATE™, STripFET™ VI

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

71 ns

Yükseklik

4.8mm

Temel Parça No

STH210

Genişlik

10.4mm

Ambalaj

Tape & Reel (TR)

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Power Dissipation

300W

Transistor Element Material

SILICON