Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Temel Parça No
- STFW
- Montaj Tipi
- Through Hole
- Ambalaj
- Tube
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kılıf / Paket
- ISOWATT218FX
- Vgs Max
- ±25V
- Ds Breakdown Voltagemin
- 650V
- Jesd30 Code
- R-PSFM-T3
- Montaj
- Through Hole
- Drainsource On Resistancemax
- 0.078Ohm
- Seri
- MDmesh™ V
- Parça Durumu
- Active
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Fet Type
- N-Channel
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- ECCN Kodu
- EAR99
- Drain To Source Voltage Vdss
- 650V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Input Capacitance Ciss Max Vds
- 3470pF @ 100V
- Çalışma Sıcaklığı
- 150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pulsed Drain Currentmax Idm
- 140A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Avalanche Energy Rating Eas
- 810 mJ
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Gate Charge Qg Max Vgs
- 82nC @ 10V
- Continuous Drain Current Id
- 35A
- Case Connection
- ISOLATED
- Rds On Max Id Vgs
- 78m Ω @ 17.5A, 10V
- Terminal Pozisyonu
- SINGLE
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 57W Tc
- Current Continuous Drain Id25
- 35A Tc
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 12 Weeks
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