STFW3N170

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1100pF @ 100V

Drain Currentmax Abs Id

2.3A

Drain To Source Voltage Vdss

1700V

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

44nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

2 mJ

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

10.4A

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

13 Ω @ 1.3A, 10V

Case Connection

ISOLATED

Continuous Drain Current Id

2.6A

Number Of Elements

1

Fabrika Tedarik Süresi

8 Weeks

Current Continuous Drain Id25

2.6A Tc

Power Dissipation Max

63W Tc

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Vgs Max

±30V

Kılıf / Paket

ISOWATT218FX

Temel Parça No

STFW

Montaj Tipi

Through Hole

Ambalaj

Tube

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Ds Breakdown Voltagemin

1700V

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fet Type

N-Channel

Parça Durumu

Active

Seri

PowerMESH™

Kurşunsuz

Lead Free

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant