STFW38N65M5

Specifications

Input Capacitance Ciss Max Vds

3000pF @ 100V

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Channels

1

Gate Charge Qg Max Vgs

71nC @ 10V

Uzunluk

15.7mm

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

660 mJ

Rds On Max Id Vgs

95m Ω @ 15A, 10V

Element Configuration

Single

Pin Sayısı

3

Yükseklik

26.7mm

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

30A

Case Connection

ISOLATED

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

650V

Power Dissipation Max

57W Tc

Current Continuous Drain Id25

30A Tc

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Transistor Application

SWITCHING

Kılıf / Paket

ISOWATT218FX

Vgs Max

±25V

Genişlik

5.7mm

Temel Parça No

STFW

Montaj Tipi

Through Hole

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

Fall Time Typ

9 ns

Drainsource On Resistancemax

0.095Ohm

Additional Feature

ULTRA LOW RESISTANCE

Fet Type

N-Channel

Weight

6.961991g

Rise Time

9ns

Seri

MDmesh™ V

Parça Durumu

Active