STF8NM60ND

Specifications

Rds On Max Id Vgs

700m Ω @ 3.5A, 10V

Drain To Source Breakdown Voltage

600V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Ambalaj

Tube

Turn Off Delay Time

37 ns

Element Configuration

Single

Rise Time

22ns

Transistor Application

SWITCHING

Case Connection

ISOLATED

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

28A

Pin Sayısı

3

Drain Currentmax Abs Id

7A

Temel Parça No

STF8N

Continuous Drain Current Id

7A

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Drainsource On Resistancemax

0.7Ohm

Number Of Elements

1

Çalışma Sıcaklığı

150°C TJ

Fabrika Tedarik Süresi

40 Weeks

Input Capacitance Ciss Max Vds

560pF @ 50V

Seri

FDmesh™ II

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3 Full Pack

Fall Time Typ

22 ns

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Vgs Max

±30V

Power Dissipation Max

25W Tc

Current Continuous Drain Id25

7A Tc

Gate Charge Qg Max Vgs

22nC @ 10V

Vgsth Max Id

5V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

200 mJ

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant