STF8NM50N

Specifications

Rds On Max Id Vgs

790m Ω @ 2.5A, 10V

Kurşunsuz

Lead Free

Element Configuration

Single

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

4.4ns

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

20A

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Threshold Voltage

3V

Çalışma Sıcaklığı

-55°C~150°C TJ

Reach Svhc

No SVHC

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Power Dissipation Max

20W Tc

Vgs Max

±25V

Jedec95 Code

TO-220AB

Yükseklik

16.4mm

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Power Dissipation

20W

Gate To Source Voltage Vgs

25V

Parça Durumu

Active

Drain To Source Breakdown Voltage

500V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

25 ns

Case Connection

ISOLATED

Drain Currentmax Abs Id

5A

Pin Sayısı

3

Temel Parça No

STF8N

Continuous Drain Current Id

5A

Number Of Elements

1

Input Capacitance Ciss Max Vds

364pF @ 50V

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

TO-220-3 Full Pack

Seri

MDmesh™ II