Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- MDmesh™ V
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-220-3 Full Pack
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 17 Weeks
- Input Capacitance Ciss Max Vds
- 4200pF @ 100V
- Jedec95 Code
- TO-220AB
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 42A Tc
- Power Dissipation Max
- 40W Tc
- Vgs Max
- ±25V
- Fall Time Typ
- 19 ns
- Transistor Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 73 ns
- Power Dissipation
- 40W
- Gate Charge Qg Max Vgs
- 98nC @ 10V
- Vgsth Max Id
- 5V @ 250μA
- Avalanche Energy Rating Eas
- 960 mJ
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Yükseklik
- 16.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Direnç
- 63mOhm
- RoHS Durumu
- ROHS3 Compliant
- Genişlik
- 4.6mm
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 25V
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Rds On Max Id Vgs
- 63m Ω @ 21A, 10V
- Drain To Source Breakdown Voltage
- 650V
- Rise Time
- 15ns
- Transistor Application
- SWITCHING
- Turn Off Delay Time
- 12 ns
- Ambalaj
- Tube
- Kurşunsuz
- Lead Free
- Element Configuration
- Single
- Pin Sayısı
- 3
- Case Connection
- ISOLATED
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