STF42N65M5

Specifications

Rds On Max Id Vgs

79m Ω @ 16.5A, 10V

Transistor Application

SWITCHING

Rise Time

24ns

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Threshold Voltage

4V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

40W Tc

Vgs Max

±25V

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Power Dissipation

40W

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

9.3mm

Vgsth Max Id

5V @ 250μA

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

650V

Turn Off Delay Time

65 ns

Pin Sayısı

3

Case Connection

ISOLATED

Number Of Elements

1

Continuous Drain Current Id

33A

Temel Parça No

STF42N

Kılıf / Paket

TO-220-3 Full Pack

Seri

MDmesh™ V

Input Capacitance Ciss Max Vds

4650pF @ 100V

Fabrika Tedarik Süresi

17 Weeks

Current Continuous Drain Id25

33A Tc

Fet Type

N-Channel