STF33N65M2

Specifications

Rds On Max Id Vgs

140m Ω @ 12A, 10V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Turn Off Delay Time

72.5 ns

Ambalaj

Tube

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

650V

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Case Connection

ISOLATED

Pulsed Drain Currentmax Idm

96A

Pin Sayısı

3

Continuous Drain Current Id

24A

Temel Parça No

STF33N

Number Of Elements

1

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.14Ohm

Input Capacitance Ciss Max Vds

1790pF @ 100V

Çalışma Sıcaklığı

150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

TO-220-3 Full Pack

Seri

MDmesh™ M2

Transistor Element Material

SILICON

Current Continuous Drain Id25

24A Tc

Power Dissipation Max

34W Tc

Vgs Max

±25V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Avalanche Energy Rating Eas

780 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Yükseklik

16.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

41.5nC @ 10V

Vgsth Max Id

4V @ 250μA

Drain To Source Voltage Vdss

650V

Turn On Delay Time

13.5 ns

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

25V