STF32NM50N

Specifications

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

1973pF @ 50V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Current Continuous Drain Id25

22A Tc

Power Dissipation Max

35W Tc

Vgs Max

±25V

Fall Time Typ

23.6 ns

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Power Dissipation

35W

Montaj Tipi

Through Hole

Turn On Delay Time

21.5 ns

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

62.5nC @ 10V

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

NRND (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Montaj

Through Hole

Gate To Source Voltage Vgs

25V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Drain To Source Breakdown Voltage

500V

Rds On Max Id Vgs

130m Ω @ 11A, 10V

Rise Time

9.5ns

Transistor Application

SWITCHING

Turn Off Delay Time

110 ns

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Pin Sayısı

3

Pulsed Drain Currentmax Idm

88A

Case Connection

ISOLATED

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99