Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 17.5A Tc
- Power Dissipation Max
- 40W Tc
- Vgs Max
- ±30V
- Jedec95 Code
- TO-220AB
- Fet Type
- N-Channel
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Fall Time Typ
- 20 ns
- Kılıf / Paket
- TO-220-3 Full Pack
- Radyasyon Dayanımı
- No
- Seri
- SuperMESH5™
- Input Capacitance Ciss Max Vds
- 1500pF @ 100V
- Fabrika Tedarik Süresi
- 17 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Montaj
- Through Hole
- Gate To Source Voltage Vgs
- 30V
- Power Dissipation
- 40W
- Turn On Delay Time
- 17 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Pin Sayısı
- 3
- Direnç
- 330MOhm
- RoHS Durumu
- ROHS3 Compliant
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 5V @ 100μA
- Gate Charge Qg Max Vgs
- 40nC @ 10V
- Transistor Application
- SWITCHING
- Rise Time
- 12ns
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- Turn Off Delay Time
- 70 ns
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Breakdown Voltage
- 950V
- Rds On Max Id Vgs
- 330m Ω @ 9A, 10V
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
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