Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- 150°C TJ
- Threshold Voltage
- 3V
- Jedec95 Code
- TO-220AB
- Power Dissipation Max
- 30W Tc
- Vgs Max
- ±25V
- Transistor Element Material
- SILICON
- Power Dissipation
- 30W
- Vgsth Max Id
- 4V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Yükseklik
- 16.4mm
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 25V
- Rds On Max Id Vgs
- 250m Ω @ 7A, 10V
- Rise Time
- 16ns
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Pulsed Drain Currentmax Idm
- 56A
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.4mm
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- ECCN Kodu
- EAR99
- Seri
- MDmesh™ II
- Kılıf / Paket
- TO-220-3 Full Pack
- Fabrika Tedarik Süresi
- 16 Weeks
- Input Capacitance Ciss Max Vds
- 1000pF @ 50V
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 14A Tc
- Fall Time Typ
- 17 ns
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 12 ns
- Gate Charge Qg Max Vgs
- 34nC @ 10V
- Direnç
- 250MOhm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Avalanche Energy Rating Eas
- 208 mJ
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