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Specifications
- Transistor Application
- SWITCHING
- Rise Time
- 22ns
- Element Configuration
- Single
- Ambalaj
- Tube
- Turn Off Delay Time
- 19 ns
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rds On Max Id Vgs
- 160m Ω @ 7.5A, 10V
- Drain To Source Breakdown Voltage
- 200V
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn)
- Temel Parça No
- STF19
- Continuous Drain Current Id
- 7.5A
- Pulsed Drain Currentmax Idm
- 60A
- Pin Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.4mm
- Vgs Max
- ±20V
- Power Dissipation Max
- 25W Tc
- Current Continuous Drain Id25
- 15A Tc
- Fet Type
- N-Channel
- Jedec95 Code
- TO-220AB
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Fall Time Typ
- 11 ns
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-220-3 Full Pack
- Seri
- MESH OVERLAY™
- Input Capacitance Ciss Max Vds
- 800pF @ 25V
- Threshold Voltage
- 3V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 12 Weeks
- Reach Svhc
- No SVHC
- Genişlik
- 4.6mm
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 11.5 ns
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