Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 5V @ 250μA
- Gate Charge Qg Max Vgs
- 40nC @ 10V
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 16.4mm
- Power Dissipation
- 30W
- Turn On Delay Time
- 17 ns
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Gate To Source Voltage Vgs
- 25V
- Parça Durumu
- Obsolete
- Genişlik
- 4.6mm
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Threshold Voltage
- 4V
- Input Capacitance Ciss Max Vds
- 1250pF @ 50V
- Seri
- FDmesh™ II
- Kılıf / Paket
- TO-220-3 Full Pack
- Radyasyon Dayanımı
- No
- Fall Time Typ
- 28 ns
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Jedec95 Code
- TO-220AB
- Fet Type
- N-Channel
- Vgs Max
- ±25V
- Power Dissipation Max
- 30W Tc
- Current Continuous Drain Id25
- 14A Tc
- Case Connection
- ISOLATED
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.4mm
- Pin Sayısı
- 3
- Pulsed Drain Currentmax Idm
- 56A
- Temel Parça No
- STF15
- Continuous Drain Current Id
- 14A
- Drainsource On Resistancemax
- 0.299Ohm
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Number Of Elements
- 1
- Drain To Source Breakdown Voltage
- 600V
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