STF130N10F3

Specifications

Additional Feature

ULTRA LOW RESISTANCE

Power Dissipation

35W

Turn On Delay Time

17 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Direnç

9.6MOhm

Avalanche Energy Rating Eas

125 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

57nC @ 10V

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Kılıf / Paket

TO-220-3 Full Pack

Radyasyon Dayanımı

No

Seri

STripFET™ III

Input Capacitance Ciss Max Vds

3305pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Current Continuous Drain Id25

46A Tc

Vgs Max

±20V

Power Dissipation Max

35W Tc

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Transistor Element Material

SILICON

Fall Time Typ

7.2 ns

Pin Sayısı

3

Pulsed Drain Currentmax Idm

184A

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

ECCN Kodu

EAR99

Continuous Drain Current Id

46A

Temel Parça No

STF13

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

9.6m Ω @ 23A, 10V

Transistor Application

SWITCHING

Rise Time

38ns