Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 25W
- Gate To Source Voltage Vgs
- 25V
- Parça Durumu
- Obsolete
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Threshold Voltage
- 3V
- Transistor Element Material
- SILICON
- Jedec95 Code
- TO-220AB
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Power Dissipation Max
- 25W Tc
- Vgs Max
- ±25V
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 40A
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn)
- Rds On Max Id Vgs
- 410m Ω @ 5A, 10V
- Terminal
- Through Hole
- Ambalaj
- Tube
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Rise Time
- 9ns
- Transistor Application
- SWITCHING
- Gate Charge Qg Max Vgs
- 30.5nC @ 10V
- Direnç
- 410mOhm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Avalanche Energy Rating Eas
- 200 mJ
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Nominal Vgs
- 3 V
- Dual Supply Voltage
- 600V
- Input Capacitance Ciss Max Vds
- 960pF @ 50V
- Seri
- MDmesh™ II
- Kılıf / Paket
- TO-220-3 Full Pack
- Fall Time Typ
- 10 ns
- JESD-609 Kodu
- e3
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 10A Tc
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