STF11NM65N

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Rds On Max Id Vgs

455m Ω @ 5.5A, 10V

Drain To Source Breakdown Voltage

650V

Rise Time

13ns

Transistor Application

SWITCHING

Ambalaj

Tube

Turn Off Delay Time

55 ns

Kurşunsuz

Lead Free

Element Configuration

Single

Pulsed Drain Currentmax Idm

48A

Pin Sayısı

3

Case Connection

ISOLATED

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements

1

Temel Parça No

STF11

Continuous Drain Current Id

12A

Seri

MDmesh™ II

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3 Full Pack

Çalışma Sıcaklığı

150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

800pF @ 50V

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Current Continuous Drain Id25

11A Tc

Vgs Max

±25V

Power Dissipation Max

25W Tc

Fall Time Typ

20 ns

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Turn On Delay Time

11 ns

Power Dissipation

30W

Gate Charge Qg Max Vgs

29nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3