Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Through Hole
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Avalanche Energy Rating Eas
- 122 mJ
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 5V @ 100μA
- Gate Charge Qg Max Vgs
- 22nC @ 10V
- Drain To Source Voltage Vdss
- 950V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Current Continuous Drain Id25
- 8A Tc
- Power Dissipation Max
- 30W Tc
- Vgs Max
- ±30V
- Jedec95 Code
- TO-247
- Fet Type
- N-Channel
- Input Capacitance Ciss Max Vds
- 630pF @ 100V
- Fabrika Tedarik Süresi
- 17 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kılıf / Paket
- TO-220-3 Full Pack
- Seri
- SuperMESH5™
- Continuous Drain Current Id
- 8A
- Temel Parça No
- STF10N
- Number Of Elements
- 1
- Drainsource On Resistancemax
- 0.8Ohm
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- SINGLE
- Operating Mode
- ENHANCEMENT MODE
- Jesd30 Code
- R-PSFM-T3
- Drain Currentmax Abs Id
- 8A
- Pulsed Drain Currentmax Idm
- 32A
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 950V
- Rds On Max Id Vgs
- 800m Ω @ 4A, 10V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 3
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