STF10N62K3

Specifications

Fall Time Typ

31 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

8.4A Tc

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1250pF @ 50V

Seri

SuperMESH3™

Kılıf / Paket

TO-220-3 Full Pack

Montaj

Through Hole

Genişlik

4.6mm

Gate Charge Qg Max Vgs

42nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Avalanche Energy Rating Eas

220 mJ

Turn On Delay Time

14.5 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Turn Off Delay Time

41 ns

Drain To Source Breakdown Voltage

620V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Continuous Drain Current Id

8.4A

Temel Parça No

STF10N

Drainsource On Resistancemax

0.75Ohm

Number Of Elements

1

Case Connection

ISOLATED

Terminal Pozisyonu

SINGLE

Pin Sayısı

3

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Power Dissipation Max

30W Tc

Vgs Max

±30V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

3.75V

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

30V

Parça Durumu

Active

Vgsth Max Id

4.5V @ 100μA

Pin Sayısı

3